1SS309 Datasheet - Toshiba Semiconductor

1SS309, Silicon Epitaxial Planar Type Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS309 1SS309 Ultra High Speed Switching Applications Unit: mm * Small package : SC-74A * Lo.

Applications

* Unit: mm
* Small package : SC-74A
* Low forward voltage : VF (3) = 0.90V (typ. )
* Fast reverse recovery time : trr = 1.6ns (typ. )
* Small total capacitance : CT = 0.9pF (typ. ) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse v

1SS309_ToshibaSemiconductor.pdf