1SS307 Datasheet - Toshiba Semiconductor

1SS307, Diode

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications * Low forward voltage * Low reverse curre.

Applications

* Low forward voltage
* Low reverse current
* Small total capacitance
* Small package : VF = 1.0 V (typ. ) : IR = 10 nA (max) : CT = 3.0 pF (typ. ) : SC
* 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Re

1SS307_ToshibaSemiconductor.pdf