XP152A12C0MR Datasheet (Torex Semiconductor)

XP152A12C0MR, POWER MOS FET

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.

In order to counter static, a gate protect diode is built-in.

The small SOT-23 pa

XP152A12C0MR Features

* Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free

* PIN C