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TSM9ND50CI N-Channel Power MOSFET

TSM9ND50CI Description

TSM9ND50CI Taiwan Semiconductor N-Channel Power MOSFET 500V, 9A, 0.9Ω .

TSM9ND50CI Features

* 100% UIS and Rg tested
* Advanced planar process
* Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
* Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 500 V RDS(on) (max) 0.9 Ω Qg 24.5 nC APPLICATI

TSM9ND50CI Applications

* Power Supply
* AC/DC LED Lighting ITO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage VDS 500 VGS ±30 Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation @ TC = 25

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Datasheet Details

Part number
TSM9ND50CI
Manufacturer
Taiwan Semiconductor
File Size
322.21 KB
Datasheet
TSM9ND50CI-TaiwanSemiconductor.pdf
Description
N-Channel Power MOSFET

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N-Channel Power MOSFET Taiwan Semiconductor
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