TSM9N90 900V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM9N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 1.4 @ VGS =10V .
The TSM9N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number: TSM9N90
Manufacturer: Taiwan Semiconductor
File Size: 491.56 KB
Datasheet: TSM9N90-TaiwanSemiconductor.pdf
Description: 900V N-Channel Power MOSFET

Features

* Low RDS(ON) 1.4Ω (Max. ) Low gate charge typical @ 65nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM9N90CZ C0G Package TO-220 Packing 50pcs / Tube TSM9N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET A

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 10/10 Version: B13

TSM9N90 Distributors

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TSM9N90 900V N-Channel Power MOSFET Taiwan Semiconductor

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