TSM3N90 900V N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 900 RDS(on)(Ω) 5.1 @ VGS =10V .
TO-251 (IPAK) TO-252 (DPAK) The TSM3N90 N-Channel Power MOSFET is produced by new advance planar process.

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Datasheet Specifications

Part number: TSM3N90
Manufacturer: Taiwan Semiconductor
File Size: 555.79 KB
Datasheet: TSM3N90-TaiwanSemiconductor.pdf
Description: 900V N-Channel Power MOSFET

Features

* Low RDS(ON) 4.3Ω (Typ. ) Low gate charge typical @ 17nC (Typ. ) Low Crss typical @ 8.7pF (Typ. ) Block Diagram Ordering Information Part No. TSM3N90CH C5G TSM3N90CP ROG TSM3N90CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Reel 50pcs / Tube 50pcs / Tube N-Ch

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 12/12 Version: C13

TSM3N90 Distributors

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TSM3N90 900V N-Channel Power MOSFET Taiwan Semiconductor

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