TSM3N80 N-Channel Power MOSFET

Taiwan Semiconductor

Description

TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 800 RDS(on)(Ω) 4.2 @ VGS =10V .
TO-251 (IPAK) TO-252 (DPAK) The TSM3N80 N-Channel Power MOSFET is produced by new advance planar process.

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Datasheet Specifications

Part number: TSM3N80
Manufacturer: Taiwan Semiconductor
File Size: 803.60 KB
Datasheet: TSM3N80-TaiwanSemiconductor.pdf
Description: N-Channel Power MOSFET

Features

* Low RDS(ON) 3.3Ω (Typ. ) Low gate charge typical @ 19nC (Typ. ) Low Crss typical @ 10.2pF (Typ. ) Improved dv/dt capability Block Diagram Ordering Information Part No. TSM3N80CH C5G TSM3N80CP ROG TSM3N80CZ C0 Package TO-251 TO-252 TO-220 Packing 75pcs / Tube 2.5Kpcs / 13” Re

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 12/12 Version: C13

TSM3N80 Distributors

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TSM3N80 N-Channel Power MOSFET Taiwan Semiconductor

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