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TSCDT20065G1 650V SiC Merged PIN Schottky Diode

TSCDT20065G1 Description

TSCDT20065G1 Taiwan Semiconductor 20A, 650V SiC Merged PIN Schottky Diode .
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TSCDT20065G1 Features

* Max junction temperature 175°C
* MPS structure for high ruggedness to forward current surge events
* High-speed switching possible
* High forward surge capability
* High-frequency operation
* Positive temperature coefficient on VF
* RoHS compliant
* Halogen-free KE

TSCDT20065G1 Applications

* General purpose
* Switch mode power supplies
* Power factor correction MECHANICAL DATA
* Case: TO-220AC-2L
* Molding compound meets UL 94V-0 flammability rating
* Terminal: Matte tin plated leads, solderable per J-STD-002
* Polarity: As circuit diagram
* Weight: 2.

📥 Download Datasheet

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Datasheet Details

Part number
TSCDT20065G1
Manufacturer
Taiwan Semiconductor
File Size
378.23 KB
Datasheet
TSCDT20065G1-TaiwanSemiconductor.pdf
Description
650V SiC Merged PIN Schottky Diode

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650V SiC Merged PIN Schottky Diode Taiwan Semiconductor
Taiwan Semiconductor TSCDT20065G1-like datasheet