Datasheet4U Logo Datasheet4U.com

TSCDT08065G1 650V SiC Merged PIN Schottky Diode

TSCDT08065G1 Description

TSCDT08065G1 Taiwan Semiconductor 8A, 650V SiC Merged PIN Schottky Diode .
only.

TSCDT08065G1 Features

* Max junction temperature 175°C
* MPS structure for high ruggedness to forward current surge events
* High-speed switching possible
* High forward surge capability
* High-frequency operation
* Positive temperature coefficient on VF
* RoHS compliant
* Halogen-free KE

TSCDT08065G1 Applications

* General purpose
* Switch mode power supplies
* Power factor correction MECHANICAL DATA
* Case: TO-220AC-2L
* Molding compound meets UL 94V-0 flammability rating
* Terminal: Matte tin plated leads, solderable per J-STD-002
* Polarity: As circuit diagram
* Weight: 2.

📥 Download Datasheet

Preview of TSCDT08065G1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
TSCDT08065G1
Manufacturer
Taiwan Semiconductor
File Size
376.28 KB
Datasheet
TSCDT08065G1-TaiwanSemiconductor.pdf
Description
650V SiC Merged PIN Schottky Diode

📁 Related Datasheet

  • TSCD1045P5Y - 10A Schottky Barrier Rectifier (TAITRON)
  • TSCD12WS - 1.0A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD14WS - 1.0A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD16WS - 1.0A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD210W - 2A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD22W - 2A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD24W - 2A Low Profile Chip Schottky Rectifier (TAITRON)
  • TSCD26W - 2A Low Profile Chip Schottky Rectifier (TAITRON)

📌 All Tags

650V SiC Merged PIN Schottky Diode Taiwan Semiconductor
Taiwan Semiconductor TSCDT08065G1-like datasheet