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TSM7N65 650V N-Channel Power MOSFET

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Description

www.DataSheet4U.com TSM7N65 650V N-Channel Power MOSFET ITO-220 TO-220 Pin Definition: 1.Gate 2.Drain 3.Source PRODUCT SUMMARY VDS (V) 650 RDS(o.
The TSM7N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

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Datasheet Specifications

Part number
TSM7N65
Manufacturer
Taiwan Semiconductor Company
File Size
425.31 KB
Datasheet
TSM7N65_TaiwanSemiconductorCompany.pdf
Description
650V N-Channel Power MOSFET

Features

* Low RDS(ON) 1.2Ω (Max. ) Low gate charge typical @ 32nC (Typ. ) Low Crss typical @ 25pF (Typ. ) Fast Switching Block Diagram Ordering Information Part No. TSM7N65CZ C0 TSM7N65CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Ra

Applications

* Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 9/9 Version: A09

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