Description
The Taiwan Memory Technology Synchronous Burst RAM family employs high-speed, low power CMOS design using advanced triple-layer polysilicon, double-layer metal technology.
Features
- ¡E FT pin for user configurable pipeline or
flow-through operation. ¡E Fast Access times:
- Pipeline.
- 3.8 / 4 / 4.5 ns - Flow-through.
- 9 / 10 / 11ns ¡ESingle 3.3V +0.3V/-0.165V power supply ¡ECommon data inputs and data outputs ¡EIndividual BYTE WRITE ENABLE and
GLOBAL WRITE control ¡E Three chip enables for depth expansion and
address pipelining ¡E Clock-controlled and registered address, data
I/Os and control signals ¡EInternally self-timed WRITE CYCLE ¡EBurst control pins (.
T35L3232B_TaiwanMemoryTechnology.pdf
