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D2294UK - RF Silicon Mosfet

Datasheet Summary

Description

Single-Ended RF Silicon Mosfet.

Source Breakdown Voltage BVGSS Gate Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum

Features

  • Simplified Amplifier Design.
  • Suitable for Broad Band.

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Datasheet preview – D2294UK

Datasheet Details

Part number D2294UK
Manufacturer TT
File Size 505.77 KB
Description RF Silicon Mosfet
Datasheet download datasheet D2294UK Datasheet
Additional preview pages of the D2294UK datasheet.

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    Full PDF Text Transcription

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    RF Silicon Mosfet 15W 500MHz 12V Single-Ended D2294UK Features: • Simplified Amplifier Design • Suitable for Broad Band Applications • Low Crss • Simple Bias Circuits • Low Noise • High Gain – 11dB Minimum • RoHS Compliant Description: Single-Ended RF Silicon Mosfet. 15W at 500MHz, 12.5V Absolute Maximum Ratings (TA = 25°C unless otherwise noted) PD Power Dissipation BVDSS Drain – Source Breakdown Voltage BVGSS Gate – Source Breakdown Voltage ID (sat) Drain Current Tstg Storage Temperature Tj Maximum Operating Junction Temperature Thermal Properties SYMBOL PARAMETER RθJC Thermal Resistance, Junction to Case 50W 40V +20V 12A -65 to +150°C 200°C MAX UNITS 3.
    Published: |