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T431616E, T431616D 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM

T431616E Description

tm TE CH T431616D/E SDRAM .
The T431616D/E SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits.

T431616E Features

* Fast access time: 5/6/7 ns
* Fast clock rate: 200/166/143 MHz
* Self refresh mode: standard and low power
* Internal pipelined architecture
* 512K word x 16-bit x 2-bank
* Programmable Mode registers - CAS# Latency: 1, 2, or 3 - Burst Length: 1, 2, 4, 8, or fu

T431616E Applications

* requiring high memory bandwidth and particularly well suited to high performance PC applications Key Specifications T431616D/E tCK3 tRAS tAC3 tRC Clock Cycle time(min. ) Row Active time(max. ) Access time from CLK(max. ) Row Cycle time(min. ) -5/6/7 5/6/7ns 35/42/42 ns 4.5/5/5.5 ns 48/54/63 ns ORDERI

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: T431616E, T431616D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
T431616E, T431616D
Manufacturer
TMT
File Size
759.46 KB
Datasheet
T431616D_TMT.pdf
Description
1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
Note
This datasheet PDF includes multiple part numbers: T431616E, T431616D.
Please refer to the document for exact specifications by model.

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SDRAM 512K 16bit 2Banks Synchronous DRAM TMT
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