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CNY21N - Optocoupler

Description

The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.

Features

  • According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree.

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Datasheet Details

Part number CNY21N
Manufacturer TEMIC
File Size 91.20 KB
Description Optocoupler
Datasheet download datasheet CNY21N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Optocoupler with Phototransistor Output Description The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package. The single components are mounted on one leadframe in the opposite position, providing a fixed distance between input and output for highest safety requirements of > 3 mm.
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