Description
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.
Features
- According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRMS D Creeping current resistance according to VDE 0303/IEC 112 Comparative Tracking Index: CTI = 275 D Thickness through insulation > 3 mm D Isolation materials according to UL 94 D Pollution degree 2.
CNY21 Datasheet