Datasheet Details
| Part number | MMBT8550 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 334.43 KB |
| Description | SMD General Purpose Transistor |
| Datasheet |
 MMBT8550-TAITRON.pdf
|
| Part number | MMBT8550 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 334.43 KB |
| Description | SMD General Purpose Transistor |
| Datasheet |
MMBT8550-TAITRON.pdf
|
MMBT8550 Unit Conditions VCEO Collector-Emitter Voltage -25 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -1.5 A PD Total Device Power Dissipation(Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 556 °C /W PD Total Device Power Dissipation, Alumina Substrate (Note 2) 300 mW TA=25 ˚C 2.4 mW/°C Derate above 25 ˚C RθJA Thermal Resistance, Junction to Ambient 417 °C /W TJ Ju
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