TP0610T Datasheet (Supertex Inc) - P-Channel Enhancement-Mode Vertical DMOS FETs

TP0610T Description

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing processThis combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positiv

Features

* High input impedance and high gain

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* Free from secondary breakdown Applications

TP0610T Datasheet - Supertex Inc

TP0610T, P-Channel Enhancement-Mode Vertical DMOS FETs