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SGM2013N - GaAs N-channel Dual-Gate MES FET

General Description

The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including cellular/cordless phone.

Key Features

  • Ultra-small package.
  • Low voltage operation.
  • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz.
  • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.5GHz.
  • High stability.
  • Built-in gate protection diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including cellular/cordless phone. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.4dB (Typ) at 900MHz, NF = 1.7dB (Typ) at 1.5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.