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SGM2016AN - GaAs N-channel Dual-Gate MES FET

General Description

The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.

This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers.

Key Features

  • Ultra-small package.
  • Low voltage operation.
  • Low noise NF = 1.2dB (typ. ) at 900MHz.
  • High gain Ga = 21dB (typ. ) at 900MHz.
  • High stability.
  • Built-in gate protection diode.

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Other Datasheets by Sony Semiconductor Solutions

Part Number Description
SGM2016AM GaAs N-channel Dual-Gate MES FET
SGM2016AP GaAs N-channel Dual-Gate MES FET
SGM2016M GaAs N-channel Dual-Gate MES FET
SGM2016P GaAs N-channel Dual-Gate MES FET
SGM2013N GaAs N-channel Dual-Gate MES FET
SGM2014AM GaAs N-channel Dual-Gate MES FET
SGM2014AN GaAs N-channel Dual-Gate MES FET
SGM2014M GaAs N-channel Dual Gate MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGM2016AN GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Description The SGM2016AN is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification. This FET is suitable for a wide range of applications including UHF TV tuners, cellular/cordless phone, and DBS IF amplifiers. Features • Ultra-small package • Low voltage operation • Low noise NF = 1.2dB (typ.) at 900MHz • High gain Ga = 21dB (typ.