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SM7360EKQG - Dual N-Channel MOSFET

Description

G2S2S2S2 G1D1D1D1 S(1P/iDn 29) D1 DFN5x6D-8_EP2 Pin1 D1 (2) (3) (4) S1/D2 G1 (1) G2 (8) S2 (5)(6)(7) N-Channel MOSFET Ordering and Marking Information SM7360EK Assembly Material Handling Code Temperature Range Package Code Package Code QG : DFN5x6D-8_EP2 Operating Junction Temperature Ran

Features

  • Channel 1 (ESD Protection) 30V/83A, RDS(ON) = 3mW (max. ) @ VGS = 10V RDS(ON) = 5.6mW (max. ) @ VGS = 4.5V.
  • Channel 2 (Integrated Schottky diode) 30V/85A, RDS(ON) = 1.3mW (max. ) @ VGS =10V RDS(ON) = 2.0mW (max. ) @ VGS =4.5V.
  • 100% UIS + Rg Tested.
  • Dual Dies Package and Minimize Board Space.
  • Lower Qg and Qgd for High-Speed Switching.
  • Lower RDS(ON) to Minimize Conduction Losses.
  • Reliable and Rugged.
  • Lead Free Available (RoHS Compliant).

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Datasheet Details

Part number SM7360EKQG
Manufacturer Sinopower
File Size 319.46 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet SM7360EKQG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SM7360EKQG ® Dual N-Channel Enhancement Mode MOSFET Features · Channel 1 (ESD Protection) 30V/83A, RDS(ON) = 3mW (max.) @ VGS = 10V RDS(ON) = 5.6mW (max.) @ VGS = 4.5V · Channel 2 (Integrated Schottky diode) 30V/85A, RDS(ON) = 1.3mW (max.) @ VGS =10V RDS(ON) = 2.0mW (max.) @ VGS =4.5V · 100% UIS + Rg Tested · Dual Dies Package and Minimize Board Space · Lower Qg and Qgd for High-Speed Switching · Lower RDS(ON) to Minimize Conduction Losses · Reliable and Rugged · Lead Free Available (RoHS Compliant) Applications · Power Management in Desktop Computer or DC/DC Converters.
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