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SMT002NA4G1 - MOSFET

SMT002NA4G1 Description

Main Product Characteristics: VDSS 20V RDS(on) 131mΩ(typ.) ID 1A SOT-23 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SMT002NA4G1 Features

* Advanced MOSFET process technology

SMT002NA4G1 Applications

* Ultra low on-resistance with low gate charge

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Datasheet Details

Part number
SMT002NA4G1
Manufacturer
Silikron
File Size
303.76 KB
Datasheet
SMT002NA4G1-Silikron.pdf
Description
MOSFET

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