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SMT002N13G1E - MOSFET

SMT002N13G1E Description

Main Product Characteristics: VDSS 20V RDS(on) 12.3mΩ(typ.) ID 7.2A SOT-23 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SMT002N13G1E Features

* Advanced MOSFET process technology

SMT002N13G1E Applications

* Ultra low on-resistance with low gate charge

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Datasheet Details

Part number
SMT002N13G1E
Manufacturer
Silikron
File Size
293.23 KB
Datasheet
SMT002N13G1E-Silikron.pdf
Description
MOSFET

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