Datasheet Details
- Part number
- SMT002N13G1E
- Manufacturer
- Silikron
- File Size
- 293.23 KB
- Datasheet
- SMT002N13G1E-Silikron.pdf
- Description
- MOSFET
SMT002N13G1E Description
Main Product Characteristics: VDSS 20V RDS(on) 12.3mΩ(typ.) ID 7.2A SOT-23 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.
SMT002N13G1E Features
* Advanced MOSFET process technology
SMT002N13G1E Applications
* Ultra low on-resistance with low gate charge
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