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SMS006N09C1 MOSFET

SMS006N09C1 Description

Main Product Characteristics: VDSS 60V RDS(on) 8.8mΩ (typ.) ID 60A D S G TO-252 .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SMS006N09C1 Features

* Advanced MOSFET process technology

SMS006N09C1 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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Datasheet Details

Part number
SMS006N09C1
Manufacturer
Silikron
File Size
282.51 KB
Datasheet
SMS006N09C1-Silikron.pdf
Description
MOSFET

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MOSFET Silikron
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