Datasheet4U Logo Datasheet4U.com

SMS006N01T1 MOSFET

SMS006N01T1 Description

Main Product Characteristics: VDSS 60V D RDS(on) 1.3mΩ (typ.) ID 360A G S S S SSS S .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SMS006N01T1 Features

* Advanced MOSFET process technology

SMS006N01T1 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

📥 Download Datasheet

Preview of SMS006N01T1 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
SMS006N01T1
Manufacturer
Silikron
File Size
376.31 KB
Datasheet
SMS006N01T1-Silikron.pdf
Description
MOSFET

📁 Related Datasheet

  • SMS03 - (SMS03 - SMS24) 4 LINE UNIDIRECTIONAL TVSarray (Microsemi Corporation)
  • SMS03C - (SMS03C - SMS24C) 4 LINE BIDIRECTIONAL TVSarray (Microsemi Corporation)
  • SMS05 - TVS Diode Array For ESD and Latch-Up Protection (Semtech Corporation)
  • SMS05C - TVS Diode Array For ESD and Latch-Up Protection (Semtech Corporation)
  • SMS05T1 - SC-74 Quad Transient Voltage Suppressor (ON Semiconductor)
  • SMS05T1G - SC-74 Quad Transient Voltage Suppressor (ON Semiconductor)
  • SMS1100 - SMD Schottky Barrier Rectifier Diodes (Diotec)
  • SMS1103 - LCM (Sunman Electronics)

📌 All Tags

MOSFET Silikron
Silikron SMS006N01T1-like datasheet