SSF3051G7 Datasheet - Silikron Semiconductor

SSF3051G7, MOSFET

Main Product Characteristics: VDSS -30V RDS(on) 45mohm(typ.) ID -4A SOT23-6

Features

* Advanced trench MOSFET process technology
* Special designed for buttery protection, load switching and general power management
* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery
* 150℃ operating temperature SSF3051G

Applications

* Absolute max Rating: Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous@ Current-Pulsed (Note 1) Maximum Power Dissipation Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD TJ,TSTG Limit -30 ±25 -4 -25 1.7 -55 To 150 Unit V V A A W ℃ Thermal Res

SSF3051G7-SilikronSemiconductor.pdf