SSF3314E Datasheet - Silikron Semiconductor

SSF3314E, MOSFET

SSF3314E DESCRIPTION The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l

Features

* VDS = 30V,ID = 8A RDS(ON) < 39mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4.0V RDS(ON) < 23mΩ @ VGS=4.5V RDS(ON) < 18mΩ @ VGS=10V ESD Rating：2000V HBM
* High Power and current handing capability
* Lead free product is acquired
* Surface Mount Package Schematic dia

Applications

* that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Sil

SSF3314E-SilikronSemiconductor.pdf