29EE010 Datasheet (Silicon Storage Technology) - 1 Mbit (128K x8) Page-Mode EEPROM

29EE010, 1 Mbit (128K x8) Page-Mode EEPROM

The SST29EE/LE/VE010 are 128K x8 CMOS Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

The SST29EE/LE/

29EE010 Features

* Single Voltage Read and Write Operations

* 5.0V-only for SST29EE010

* 3.0-3.6V for SST29LE010

* 2.7-3.6V for SST29VE010

* Superior Reliability

* Endurance: 100,000 Cycles (typical)

* Greater than 100 years Data Retention

* Low Power