Datasheet4U Logo Datasheet4U.com

29EE512 Datasheet - SST

29EE512 SST29EE512

The SST29EE512/29LE512/29VE512 are 64K x8 CMOS, Page-Write EEPROMs manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The S.

29EE512 Features

* Single Voltage Read and Write Operations

* 5.0V-only for SST29EE512

* 3.0-3.6V for SST29LE512

* 2.7-3.6V for SST29VE512

* Superior Reliability

* Endurance: 100,000 Cycles (typical)

* Greater than 100 years Data Retention

* Low Power

29EE512 Datasheet (265.94 KB)

Preview of 29EE512 PDF
29EE512 Datasheet Preview Page 2 29EE512 Datasheet Preview Page 3

Datasheet Details

Part number:

29EE512

Manufacturer:

SST

File Size:

265.94 KB

Description:

Sst29ee512.

📁 Related Datasheet

29EE010 1 Mbit (128K x8) Page-Mode EEPROM (Silicon Storage Technology)

29EE011 W29EE011 (Winbond)

2902 Miniature Open Substrate Mixers (M-A-Com)

2903Y Low-power dual voltage comparator (STMicroelectronics)

2904BA Industry-Standard Dual Operational Amplifiers (Texas Instruments)

2904Q1 Industry-Standard Dual Operational Amplifiers (Texas Instruments)

29050H HD29050 (ETC)

2906 PNP Transistor (ETC)

TAGS

29EE512 SST29EE512 SST

29EE512 Distributor