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SSM4920M
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Simple Drive Requirement Low On-resistance Fast Switching
D1 G2 S2 D2 D1
D2
BV DSS R DS(ON) ID
25V 25mΩ 7A
SO-8
S1
G1
Description
D1 D2
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for all commercial and industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
G1 S1
G2 S2
Absolute Maximum Ratings
Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current
1,4 3 3
Rating 25 ± 20 7 5.7 20 2 0.