SSM4410M
Description
Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for mercial and industrial surface mount applications and well suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings
Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating 30 ± 20 10 8 50 2.5 0.02 -55 to 150 -55 to 150
Units V V A A A W W/°C °C °C
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 50 Unit °C/W
Rev.2.02 12/29/2003
.Silicon Standard.
1 of 6
Data Sheet 4 U .
..
Electrical Characteristics @ T j=25o C (unless...
