SVSP60R090THD4, SVSP60R090P7HD4-SilanMicroelectronics Datasheet - Silan Microelectronics

SVSP60R090THD4, SVSP60R090P7HD4-SilanMicroelectronics, 600V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP60R090P7HD4-SilanMicroelectronics_removed.pdf

SVSP60R090THD4 Datasheet Preview — This datasheet PDF includes multiple part numbers: SVSP60R090THD4, SVSP60R090P7HD4-SilanMicroelectronics. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

SVSP60R090THD4, SVSP60R090P7HD4-SilanMicroelectronics

Manufacturer:

Silan Microelectronics

File Size:

625.28 KB

Description:

600V SUPER JUNCTION MOS POWER TRANSISTOR

Note:

This datasheet PDF includes multiple part numbers: SVSP60R090THD4, SVSP60R090P7HD4-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

Features

* 38A, 600V, RDS(on)(typ. )=75mΩ@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFOR

SVSP60R090THD4 Distributors

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SVSP60R090P7HD4-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

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