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SVSP60R090FJDHD4, SVSP60R090P7HD4-SilanMicroelectronics 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP60R090FJDHD4 Description

Silan Microelectronics SVSP60R090P7(L)(FJD)(T)(S)HD4_Datasheet 38A, 600V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP60R090P7(L)(FJD)(T)(S)HD4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP60R090FJDHD4 Features

* 38A, 600V, RDS(on)(typ. )=75mΩ@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability
* 100% avalanche tested
* Pb-free lead plating
* RoHS compliant KEY PERFOR

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SVSP60R090FJDHD4, SVSP60R090P7HD4-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SVSP60R090FJDHD4, SVSP60R090P7HD4-SilanMicroelectronics
Manufacturer
Silan Microelectronics
File Size
625.28 KB
Datasheet
SVSP60R090P7HD4-SilanMicroelectronics_removed.pdf
Description
600V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: SVSP60R090FJDHD4, SVSP60R090P7HD4-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVSP60R090FJDHD4-like datasheet