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SVSP11N65F, SVSP11N65D 650V SUPER JUNCTION MOS POWER TRANSISTOR

SVSP11N65F Description

Silan Microelectronics SVSP11N65D/F/S/FJD/K/TD2_Datasheet 11A, 650V SUPER JUNCTION MOS POWER TRANSISTOR .
SVSP11N65D/F/S/FJD/K/TD2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVSP11N65F Features

* 11A,650V, RDS(on)(typ. )=0.33@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220F-3L 1 3 TO-252-2L ORDERING INFORMATION Part No. SVSP11N65DD2TR SVSP11N65

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SVSP11N65F, SVSP11N65D. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SVSP11N65F, SVSP11N65D
Manufacturer
Silan Microelectronics
File Size
408.93 KB
Datasheet
SVSP11N65D-SilanMicroelectronics.pdf
Description
650V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: SVSP11N65F, SVSP11N65D.
Please refer to the document for exact specifications by model.

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650V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVSP11N65F-like datasheet