SVS65R240TD4, SVS65R240FJDD4 - 650V SUPER JUNCTION MOS POWER TRANSISTOR

Silan Microelectronics

Datasheet Details

Part number	SVS65R240TD4, SVS65R240FJDD4
Manufacturer	Silan Microelectronics
File Size	599.19 KB
Description	650V SUPER JUNCTION MOS POWER TRANSISTOR
Datasheet	SVS65R240FJDD4-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVS65R240TD4, SVS65R240FJDD4. Please refer to the document for exact specifications by model.

SVS65R240FJD(D)(L8A)(T)D4 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

20A, 650V, RDS(on)(typ. )=0.19@VGS=10V.
New revolutionary high voltage technology.
Ultra low gate charge.
Periodic avalanche rated.
Extreme dv/dt rated.
High peak current capability.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 13 TO-252-2L D(2) G(1) S(3) S(3) S(3) DFN-4-8x8x0.85-2.0 123 TO-220-3L 123 TO-220FJD-3L KEY.

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Published: Mar 17, 2025 |