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SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics - 600V SUPER JUNCTION MOS POWER TRANSISTOR

SVS20N60PND2 Description

Silan Microelectronics SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2_Datasheet 20A, 600V SUPER JUNCTION MOS POWER TRANSISTOR GENERAL .
SVS20N60FJ(K)(T)(PN)(S)(P7)(F)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s super junction MOS technology.

SVS20N60PND2 Features

* 20A, 600V, RDS(on)(typ. )=0.16@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt rated
* High peak current capability 12 3 TO-220FJ-3L 1 2 3 TO-3P ORDERING INFORMATION Part No. SVS20N60FJD2 SVS20N60KD

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics
Manufacturer
Silan Microelectronics
File Size
474.58 KB
Datasheet
SVS20N60FJD2-SilanMicroelectronics_removed.pdf
Description
600V SUPER JUNCTION MOS POWER TRANSISTOR
Note
This datasheet PDF includes multiple part numbers: SVS20N60PND2, SVS20N60FJD2-SilanMicroelectronics.
Please refer to the document for exact specifications by model.

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600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics
Silan Microelectronics SVS20N60PND2-like datasheet