SVGP20110NS, SVGP20110NT - 200V N-CHANNEL MOSFET

Silan Microelectronics

Datasheet Details

Part number	SVGP20110NS, SVGP20110NT
Manufacturer	Silan Microelectronics
File Size	446.36 KB
Description	200V N-CHANNEL MOSFET
Datasheet	SVGP20110NT-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVGP20110NS, SVGP20110NT. Please refer to the document for exact specifications by model.

SVGP20110NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

88A, 200V, RDS(on)(typ. )=9.6m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220-3L 1 3 TO-263-2L TO-247-3L KEY.

📁 SVGP20110NS Similar Datasheet

Other Datasheets by Silan Microelectronics

Published: Mar 17, 2025 |