SVG105R4NS, SVG105R4NT - 100V N-CHANNEL MOSFET

Silan Microelectronics

Datasheet Details

Part number	SVG105R4NS, SVG105R4NT
Manufacturer	Silan Microelectronics
File Size	345.35 KB
Description	100V N-CHANNEL MOSFET
Datasheet	SVG105R4NT-SilanMicroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: SVG105R4NS, SVG105R4NT. Please refer to the document for exact specifications by model.

SVG105R4NT(S)(KL) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

120A, 100V, RDS(on)(typ. )= 5.0m@VGS=10V.
Low gate charge.
Low Crss.
Fast switching.
Extreme dv/dt rated.
100% avalanche tested.
Pb-free lead plating.
RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-262L-3L 1 3 TO-263-2L 1 2 3 TO-220-3L KEY.

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Published: Mar 17, 2025 |