HYB514800BJ - 512kx8-Bit Dynamic RAM

Siemens

📥 Download Datasheet

HYB514800BJ Datasheet Preview — Preview of HYB514800BJ PDF

Datasheet Details

Part number	HYB514800BJ
Manufacturer	Siemens
File Size	211.28 KB
Description	512kx8-Bit Dynamic RAM
Datasheet	HYB514800BJ_SiemensSemiconductorGroup.pdf

HYB514800BJ Product details

Description

DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 80 ns) Semiconductor Group 125 01.95 HYB 514800BJ -60/-70/-80 512k x 8 DRAM The HYB 514800BJ is the new generation dynamic RAM organized as 512 288 words by 8-bit.The HYB 514800BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.Multiplexed address inputs permit the HYB 514800BJ to be packed in a standard plastic 400mil wi

Features

, ICC4 and ICC6 depend on cycle rate. ICC1 , ICC4 depend on output loading. 4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 5.

📁 HYB514800BJ Similar Datasheet

HYB18H1G321AF-10 - GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM (Qimonda AG)
HYB18H1G321AF-11 - GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM (Qimonda AG)
HYB18H1G321AF-14 - GDDR3 Graphics RAM 1-Gbit GDDR3 Graphics RAM (Qimonda AG)
HYB18H256321AF-12 - 256-Mbit x32 GDDR3 DRAM (Infineon)
HYB18H256321AF-14 - 256-Mbit x32 GDDR3 DRAM (Infineon)
HYB18H256321AF-16 - 256-Mbit x32 GDDR3 DRAM (Infineon)
HYB18H256321AFL14 - 256-Mbit x32 GDDR3 DRAM (Infineon)
HYB18H256321AFL16 - 256-Mbit x32 GDDR3 DRAM (Infineon)

Other Datasheets by Siemens

HYB514100BJ-50 - 4M x 1-Bit Dynamic RAM
HYB514100BJ-60 - 4M x 1-Bit Dynamic RAM
HYB514171BJ-50 - 256k x 16-Bit Dynamic RAM
HYB514171BJ-60 - 256k x 16-Bit Dynamic RAM
HYB514175BJ-50 - 256k x 16-Bit EDO-DRAM
HYB514175BJ-55 - 256k x 16-Bit EDO-DRAM

Published: Apr 23, 2005 |