HYB514100BJ-60 - 4M x 1-Bit Dynamic RAM

Siemens

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Datasheet Details

Part number	HYB514100BJ-60
Manufacturer	Siemens
File Size	108.65 KB
Description	4M x 1-Bit Dynamic RAM
Datasheet	HYB514100BJ-60_SiemensSemiconductorGroup.pdf

HYB514100BJ-60 Product details

Description

DRAM (access time 50 ns) DRAM (access time 60 ns) P-SOJ-26/20-2 V SS DO CAS N.C.A9 DI WE RAS N.C.A10 1 2 3 4 5 26 25 24 23 22 A0 A1 A2 A3 V CC 9 10 11 12 13 18 17 16 15 14 A8 A7 A6 A5 A4 SPP02808 Pin Configuration Pin Names A0 A10 RAS CAS WE DI DO Address Input Row Address Strobe Column Address Strobe Read/Write Input Data In Data Out Power Supply (+ 5 V) Ground (0 V) No Connection VCC VSS N.C.Semiconductor Group 2 1998-10-01 HYB 514100BJ-50/-60 4M × 1 DRAM WE CAS

Features

include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL. Type HYB 514100BJ-50 HYB 514100BJ-60 Ordering Code Q67100-Q971 Q67100-Q759 Package P-SOJ-26/20-2 300 mil P-SOJ-26/20-2 300 mil.

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Published: Apr 23, 2005 |