High barrier diode for balanced mixers, phase detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type BAT 114-099 Marking S7 Ordering Code (taped & reel) Q62702-A1017 Pin Configuration Package1) SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings (per diode) Parameter Reverse voltage Forward current Operation temperature Storage temperature Power dissipation, TS ≤ 70 °C Symbol Limit Values 4 90.
Q62705-K110 - Silicon Spreading Resistance Temperature Sensor(Siemens Semiconductor)
Q62705-K111 - Silicon Spreading Resistance Temperature Sensor(Siemens Semiconductor)
Other Datasheets by Siemens Semiconductor Group
Q62702-A1010- Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Q62702-A1004- Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006- Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1025- Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Q62702-A1028- Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies)
Q62702-A1030- Silicon Switching Diode Array (For high speed switching applications Common cathode)
Q62702-A1017_SiemensSemiconductorGroup.pdf