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Q62702P1137 - Infra-red Emitter 5mm

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol

Features

  • q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode www.DataSheet4U.com 29 27 9.0 8.2 spacing 2.54 mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 ø4.8 ø5.1 Area not flat Chip position 4.8 4.2 0.6 0.4 GEO06645 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 fex06630 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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