The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Preliminary data
BUZ 103SL-4
SIPMOS ® Power Transistor
• Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated
Type BUZ 103SL-4
VDS
55 V
ID
4.8 A
RDS(on)
0.055 Ω
Package P-DSO-28
Ordering Code C67078-S. . . .- . .
Maximum Ratings Parameter Continuous drain current one channel active Symbol Values 4.8 Unit A
ID IDpuls
19.2
TA = 25 °C
Pulsed drain current one channel active
TA = 25 °C
Avalanche energy, single pulse
EAS
140 dv/dt 6
mJ
ID = 4.8 A, VDD = 25 V, RGS = 25 Ω L = 12 mH, Tj = 25 °C
Reverse diode dv/dt kV/µs
IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C
Gate source voltage Power dissipation ,one channel active
VGS Ptot
± 14 2.
BUZ103SL-4 Datasheet
