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BUZ103S - Power Transistor

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Part number BUZ103S
Manufacturer Siemens Semiconductor Group
File Size 121.52 KB
Description Power Transistor
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BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS 55 V ID 31 A RDS(on) 0.04 Ω Package Ordering Code BUZ 103 S TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TC = 25 °C TC = 100 °C ID A 31 22 Pulsed drain current TC = 25 °C IDpuls 124 E AS Avalanche energy, single pulse ID = 31 A, V DD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C mJ 140 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Reverse diode dv/dt IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 31 7.
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