LD274-2 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Siemens Group

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Datasheet Details

Part number	LD274-2
Manufacturer	Siemens Group
File Size	34.63 KB
Description	GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Datasheet	LD274-2_SiemensSemiconductorGroup.pdf

LD274-2 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax

Features

q Extremely narrow half angle q GaAs infrared emitting diode, fabricated in a q q q q Schmelzepitaxieverfahren Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gruppiert lieferbar Gehäusegleich mit SFH 484 liquid phase epitaxy process High reliability High pulse handling capability Available in groups Same package as SFH 484 Anwendungen q IR-Fernsteuerung von Fernseh- und.

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Published: Apr 25, 2005 |