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LD271H - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Description

Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838 Gehäuse Package 5-mm-LED-Gehäuse (T 1 3/4), graugetöntes EpoxyGießharz, Lötspieße im 2.54-mm-Raster (1/10’’) 5 mm LED package (T 1 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10’’) Symbol Symb

Features

  • q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q long leads q Available in groups q Same package as SFH 300, SFH 203.

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Datasheet Details

Part number LD271H
Manufacturer Siemens Group
File Size 41.39 KB
Description GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Datasheet download datasheet LD271H Datasheet

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Other Datasheets by Siemens Group

Part Number Description
LD271H INFRARD EMITTER
LD271HL GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD271 GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
LD271 INFRARD EMITTER
LD271L INFRARD EMITTER

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 1.3 1.0 5.9 5.5 1.0 0.7 Cathode Approx. weight 0.5 g Chip position GEX06239 Cathode 29 27 9.0 8.2 spacing 2.54mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 0.4 0.6 Area not flat Chip position Approx. weight 0.2 g 4.8 4.2 ø4.8 ø5.1 0.6 0.4 GEO06645 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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