LD242 - GaAs Infrared Emitter

Siemens Group

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Datasheet Details

Part number	LD242
Manufacturer	Siemens Group
File Size	39.85 KB
Description	GaAs Infrared Emitter
Datasheet	LD242_SiemensSemiconductorGroup.pdf

LD242 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Durchlaßstrom, TC = 25 °C Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung, TC = 25 °C Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 40 + 80 5 300 3 470 450 160 Einheit Unit °C V mA A mW K/W K/W Top; Tstg VR IF IFSM Ptot RthJA RthJC Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Waveleng

Features

q GaAs infrared emitting diode, fabricated in a q q q q q Schmelzepitaxieverfahren Kathode galvanisch mit Gehäuseboden verbunden Hohe Zuverlässigkeit Großer Öffnungskegel Gehäusegleich mit BP 103, BPX 63, SFH 464, SFH 483 Anwendungsklasse nach DIN 40 040 GQG liquid phase epitaxy process Cathode is electrically connected to the case High reliability Wide beam Same package as BP 103, BPX 63, SFH 464, SFH 483 DIN humidity category in acc. with DIN 40 040 GQG Anwendungen q IR-Fernsteuerungen und.

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Published: Apr 25, 2005 |