LD261 - GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Siemens Group

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Datasheet Details

Part number	LD261
Manufacturer	Siemens Group
File Size	36.03 KB
Description	GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
Datasheet	LD261_SiemensSemiconductorGroup.pdf

LD261 Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 40 + 80 80 5 50 1.6 70 750 650 Einheit Unit °C °C V mA A mW K/W K/W Top; Tstg Tj VR IF IFSM Ptot RthJA RthJL Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Welle

Features

q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q Available in bins q Same package as BPX 81.

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Published: Apr 25, 2005 |