SEMIX353GD176HDC Datasheet (Semikron International)

SEMIX353GD176HDC, IGBT

SEMiX353GD176HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 1000 V VGE ≤ 20 V VCES ≤ 1700 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1700 353 251 225 450 -20 20 10 -55 150 428 289 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1800 -40 150 600 -40 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX353GD176HDc w

SEMIX353GD176HDC Features

* Homogeneous Si

* Trench = Trenchgate technology

* VCE(sat) with positive temperature coefficient

* UL recognised file no. E63532 Typical Applications

* AC inverter drives

* UPS

* Electronic welders Characteristics Symbol IGBT VCE(sat)