SEMIX353GD126HDC Datasheet (Semikron International)

SEMIX353GD126HDC, IGBT

SEMiX353GD126HDc Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 600 V VGE ≤ 20 V VCES ≤ 1200 V VGES tpsc Tj Inverse diode IF Tc = 25 °C Tc = 80 °C Tj = 125 °C Tj = 150 °C Tc = 25 °C Tc = 80 °C 1200 364 256 225 450 -20 20 10 -40 150 329 228 225 IFRM = 2xIFnom tp = 10 ms, sin 180°, Tj = 25 °C 450 1700 -40 150 600 -40 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V µs °C A A A A A °C A °C V Conditions Values Unit SEMiX® 33c Trench IGBT Modules SEMiX353GD126HDc ww

SEMIX353GD126HDC Features

* Homogeneous Si

* Trench = Trenchgate technology

* VCE(sat) with positive temperature coefficient

* High short circuit capability

* UL recognised file no. E63532 Typical Applications

* AC inverter drives

* UPS

* Electronic Weldin