HRW82N10K - N-Channel MOSFET

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Datasheet Details

Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 110nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 6.5 Pȍ (Typ. ) @VGS=10V 100% Avalanche Tested August 2014 BVDSS = 100 V RDS(on) typ = Pȍ ID = 100 A D2-PAK I2-PAK HRW82N10K HRI82N10K 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS EAR PD Drain-Source Voltage Drain C.

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Published: Apr 13, 2017 |